SAN JOSE and SANTA CLARA, Calif., April 20, 2011 — The QDR Consortium, which includes Cypress Semiconductor Corp. (NASDAQ:CY) and Renesas Electronics Corporation (TSE: 6723), today announced the industry's fastest Quad Data Rate (QDR) SRAM devices (static random access memory).The new memory devices will be named QDRII+ Xtreme and will operate at clock speeds as fast as 633 … Cypress has begun sampling the industry's first Quad Data Rate™ II+ (QDR™ II+) and Double Data Rate II+ (DDRII+) SRAM devices. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high-performance computing challenges. Cypress's QDR-IV SRAM is the market's highest performance, standardized networking memory solution. QDR SRAM was designed for high-speed communications and networking applications, where data throughput is more important than cost, power efficiency or density. CY7C1512KV18-250BZXC Cypress Semiconductor SRAM 72MB (4Mx18) 1.8v 250MHz QDR II SRAM datasheet, inventory & pricing. The technology was created by Micron and Cypress , later followed by IDT , then NEC , Samsung and Renesas . The QDR Co-Development Team, comprised of Cypress, IDT, NEC, Renesas, Samsung, and formerly Micron, has jointly developed specifications for the QDR, QDR-II, DDR and DDR-II SRAM … The new memory chips deliver the world's highest-density and highest-bandwidth, enabling up to 50 percent more system-level bandwidth The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR ® SRAM with a variety of speeds, word widths, densities, and packages. Cypress is committed to offering a complete range of high-density synchronous SRAM families, including QDR /DDR , II and II , No Bus Latency™ and standard pipelined and flow-through products. Cypress Semiconductor Corp. , the Static Random Access Memory market leader, today announced production availability of the industry's first Quad Data Rate IV SRAM. This allows data to be transferred with excellent efficiency and makes it possible to achieve data rates that are four times those of earlier synchronous SRAM devices. Figure 3 QDR-IV interface 4:1/1:4 mux/demux and application channel mapping (Source: Cypress) In the QDR-IV HP-based STATS implementation, Port A and Port B are populated with the requests that are independent of the addresses and follow the order Ch0-Ch1-Ch2-Ch3. SRAM and DRAM difference Reference Schematic Design and Layout Guidelines for Cypress’s Standard Sync/NoBL SRAMs - KBA203263 Generating VREF and VTT in QDR®, DDR-II, DDR-II+, and Xtreme SRAMs - … RTR, the number of fully random memory accesses per second, is the critical memory performance metric for increased line card and switching rates.
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